近5年发表期刊论文如下：
[1]Zhong Lan, Yangjie Ou, Xiarong Hu and Dong Liu,A Novel 4H-SiC Asymmetric MOSFET with Step Trench[J], Micromachines, 2024,15,724:1-13(SCI). [2]Ou, Yangjie; Lan, Zhong; Hu, Xiarong; Liu, Dong, Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed[J], Micromachines, 2024,15(2):1-13(SCI). [3]Sujie Yin, Wei Cao, Xiarong Hu, Xinglai Ge and Dong Liu；A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness, MICROMACHINES[J], 2023,14(10):1-12(SCI). [4]Xiarong Hu, Yangjie Ou, Ruixue Mai, Mingyue Li , Yonggen Xu, Dong Liu；1.2 kV 4H–SiC Super Junction UMOSFET with a Low-K dielectric pillar; MICRO AND NANOSTRUCTURES[J], 2023, 176:1-8(SCI). [5]Cao, W; Yin, SJ; Hu, XR; Li, MY; Ge, XL; Liu, D；“A novel SiC superjunction MOSFET with three-level buffer and unipolar channel diode”；MICRO AND NANOSTRUCTURES[J], 2022, 172:1-8(SCI). [6]D Liu，M Li，Y Ou，Z Lan，M Tang，W Wang，X Hu*；“1.2 kV 4H-SiC planar power MOSFETs with a low-K dielectric in central gate”；IET circuits, devices & systems[J], 2022,16(5):419-426(SCI). [7]Xiarong Hu, Weibo Wang, Lv Rui. The differences between N- and N+ buried layers in improving the breakdown voltage of RESURF LDMOSFETs[J].INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS[J], 2020,33(2):1-9(SCI).
近五年科研项目如下： [1]150V功率LDMOS的仿真与工艺设计 企事业单位委托 负责人 2024 [2]宽输入低功耗低压差线性稳压器芯片设计 企事业单位委托 负责人 2023 [3]基于加速传感器的高精度、低功耗放大电路研究 企事业单位委托 负责人 2022 [4]横向高压功率器件新结构及耐压模型研究 学科开放课题“高性能科学计算”平台下项目 负责人 2019
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